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Effect of oxygen addition on boron incorporation on semiconductive diamond CVD

✍ Scribed by Sakaguchi, I; Nishitani-Gamo, M; Loh, K.P; Yamamoto, K; Haneda, H; Ando, T


Book ID
121729258
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
154 KB
Volume
7
Category
Article
ISSN
0925-9635

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## Abstract The development of diamond based devices for high power electronic applications requires the growth of thick heavily boron doped diamond. During the growth of CVD single crystals, the final form of the film depends on the different crystalline faces growth rate with respect to each othe