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Effect of nonuniform distribution of radiation defects in GaAs on the DLTS spectra

โœ Scribed by V. A. Novikov; V. V. Peshev


Book ID
110119775
Publisher
Springer
Year
1998
Tongue
English
Weight
120 KB
Volume
32
Category
Article
ISSN
1063-7826

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A simulation of Si diffusion in layer-doped GaAs crystals during annealing in the ambients with no excess of Ga or As and in As-rich conditions has been carried out. A model of diffusion due to ''silicon atom-gallium vacancy'' pairs taking into account the nonuniform distribution of point defects re