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Effect of MOVPE growth parameters on the photoluminescence linewidth of ZnSxSe1−x (0⩽x⩽1) epilayers on GaAs

✍ Scribed by M. Heuken; K.P. Geyzers; J. Söllner; A. Schneider; F.E.G. Guimarães; K. Heime

No coin nor oath required. For personal study only.

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