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Effect of MeV electron irradiation on Si-SiO 2 structures

✍ Scribed by Kaschieva, S; Gushterov, A; Angelov, Ch; Dmitriev, S N

Book ID
125440757
Publisher
Institute of Physics
Year
2014
Tongue
English
Weight
784 KB
Volume
514
Category
Article
ISSN
1742-6588

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Characteristics of the electron-emission
Characteristics of the electron-emission defects introduced in Si–SiO2 structures by MeV electron irradiation
✍ A.F. Zatsepin; S. Kaschieva; S.N. Dmitriev; E.A. Buntov πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 216 KB

Defects induced by high-energy electrons in Si-SiO 2 structure have been studied by the optically stimulated electron emission (OSEE) method. Si-SiO 2 structures with oxide thickness of 100 nm are irradiated with 23 MeV electrons for different durations. It is shown that most of the defects created