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Effect of low-temperature annealing on the quality of InSe layered single crystals and the characteristics ofn-InSe/p-InSe heterojunctions

✍ Scribed by Khandozhko, V. A.; Kudrynskyi, Z. R.; Kovalyuk, Z. D.

Book ID
125394883
Publisher
Springer
Year
2014
Tongue
English
Weight
705 KB
Volume
48
Category
Article
ISSN
1063-7826

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