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Effect of irradiation temperature on the radiation expansion of quartz

โœ Scribed by V. N. Bykov; A. V. Denisov; V. B. Dubrovskii; V. V. Korenevskii; G. K. Krivokoneva; L. P. Muzalevskii


Publisher
Springer US
Year
1981
Tongue
English
Weight
268 KB
Volume
51
Category
Article
ISSN
1573-8205

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Effect of irradiation temperature on rad
โœ H. Ohyama; K. Hayama; K. Takakura; T. Jono; E. Simoen; C. Claeys ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 208 KB

Results are presented of a study of radiation damage by high-temperature electron irradiation in submicron MOS FETs with standard thermal oxide and nitrogen annealed gate oxide as gate dielectric material. n-Channel 15 2 MOS FETs were irradiated by 2-MeV electrons for the fluence of 1 3 10 e / cm a