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Effect of irradiation of ZnS single crystals by neon ions on the photoluminescence band intensity

โœ Scribed by Yu. V. Bochkov; V. I. Demin; L. S. Lepnev; V. F. Tunitskaya


Publisher
Springer US
Year
1980
Tongue
English
Weight
355 KB
Volume
33
Category
Article
ISSN
0021-9037

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โœ Dr. K. D. Glinchuk; V. I. Guroshev; A. V. Prokhorovich; N. S. Zayats ๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 427 KB

Irradiation-induced 1.26 and 1.39 eV Emiwion Bands1) The effect of 2.2 MeV electron irradiation and subsequent annealings on the photoluminescence in zinc-doped p-type GaAs crystals is studied and analyzed. Rather strong emission bands peaked a t hv, (77 K ) near 1.26 eV (induced by electron irradi