Effect of InGaAsP intermediate layer in 1.3 μm
✍ Scribed by Lei, P.-H.; Yang, C.-D.; Wu, M.-C.; Wang, Z.-B.; Lin, C.-C.; Ho, W.-J.
- Book ID
- 114455983
- Publisher
- The Institution of Electrical Engineers
- Year
- 2003
- Tongue
- English
- Weight
- 232 KB
- Volume
- 150
- Category
- Article
- ISSN
- 1350-2433
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## Abstract The large‐signal modulation response of a 1.3 μm InGaAsP four‐well laser of the Fabry–Perot type is investigated when the input signal is either a sinusoidal or a square wave. The time evolution of the photon density is obtained by the numerical solution of the rate equations for severa
This study concerns InGaAsP laser diodes with ptype substrates and with leak currents that can be ignored at room temperature. We investigate the radiative recombination coefficient and the Auger recombination coefficient based on the delay time of laser oscillation from the pulse current applied to