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Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n-type ZnO

✍ Scribed by Kim, Sang-Ho; Kim, Han-Ki; Seong, Tae-Yeon

Book ID: 121681131
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 218 KB
Volume: 86
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1862772

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## Abstract The electrical properties and interfacial reactions of Pt/Ru Schottky contacts on n‐type gallium nitride (GaN) have been investigated as a function of annealing temperature. The calculated Schottky barrier height (SBH) of the as‐deposited Pt/Ru Schottky contact is found to be 0.69 eV cu