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Effect of hydrogen on the current-voltage characteristics of Pd/p-InGaAsP and Pd/n-InGaAs barrier structures

✍ Scribed by V. P. Voronkov; L. S. Khludkova


Book ID
110120230
Publisher
Springer
Year
1999
Tongue
English
Weight
52 KB
Volume
33
Category
Article
ISSN
1063-7826

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## Abstract Resonant tunnelling diodes of cubic Al(Ga)N/GaN were grown by plasma assisted molecular beam epitaxy on 3C‐SiC (001). We observe a pronounced negative differential resistance at about 1.2 V with a peak‐to‐valley ratio (PVR) of 1.3 to 2.7 at room temperature. Experimental data is in good