Effect of hydrogen implantation on semiconductor–metal transition and high-pressure thermopower in Si
✍ Scribed by Sergey V. Ovsyannikov; Vladimir V. Shchennikov; Irina V. Antonova; Vsevolod V. Shchennikov Jr.; Yuri S. Ponosov
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 714 KB
- Volume
- 462
- Category
- Article
- ISSN
- 0921-5093
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The cubic-diamond 6 b-tin phase transition in Si and Ge is studied using modern first-principles techniques based on density-functional theory (DFT) without making use of any experimental inputs. The relevant Gibbs energies, GpY T U À TS pV, are obtained in the quasi-harmonic approximation from stat
Linear oligomerization of three deuterium isomers of butadiene (C4H6, C4H2D4, C,D6) was effected by C02(CO)s-A1Eta (I) and C0(C3H5)3, and cyclo-oligomerization of C4H6 by Ni(CO)4-AIEt3 (II) and Ni(C3Hs)2. Isotopic isomers of 3-methyl-l,4,6-heptatriene(MHT) were obtained; NMR studies indicated that o