The damage evolution due to high electronic energy deposition during 375 MeV Xe and 593 MeV Au ion irradiation was studied in the semiconductors InP, GaP, GaAs, AlAs and Ge using RBS and TEM. In InP the high electronic energy deposition leads to the formation of amorphous tracks. In the other materi
โฆ LIBER โฆ
Effect of high electronic energy deposition in semiconductors
โ Scribed by W. Wesch; A. Kamarou; E. Wendler
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 826 KB
- Volume
- 225
- Category
- Article
- ISSN
- 0168-583X
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