Effect of High BZO Dopant Levels on Performance of 2G-HTS MOCVD Wire at Intermediate and Low Temperatures

✍ Scribed by Majkic, G.; Yao Yao, ; Jinfgu Liu, ; Yuhao Liu, ; Khatri, N. D.; Tuo Shi, ; Yimin Chen, ; Galstyan, E.; Changhui Lei, ; Selvamanickam, V.

• Book ID: 121700533
• Publisher: IEEE
• Year: 2013
• Tongue: English
• Weight: 667 KB
• Volume: 23
• Category: Article
• ISSN: 1051-8223
• DOI: 10.1109/tasc.2012.2236675