Temperature and bias investigation of se
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M. Alvaro; A. Caddemi; G. Crupi; N. Donato
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Article
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2005
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Elsevier Science
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English
β 209 KB
In the present work we analyze the performance of power pseudomorphic HEMT's having scaled gate widths (300, 600, 900 mm) under a wide range of bias and temperature conditions to investigate the onset of an hot electron regime. These devices exhibit a negative slope of I D with respect to V DS and a