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Effect of heat treatment on some of the electrical properties of Sb2Te3 single crystals grown by the Bridgman method

✍ Scribed by Mzerd, A. ;Sayah, D. ;Tedenac, J. C. ;Boyer, A.

Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
372 KB
Volume
141
Category
Article
ISSN
0031-8965

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Sr 3 Ga 2 Ge 4 O 14 (SGG) has been grown by the vertical Bridgman method. The dielectric constants Ξ΅ T 11 and Ξ΅ T 33 at room temperature is 13.61 and 18.18, respectively. The dielectric measurements show that SGG crystals display relative high temperature stability and high frequency stability. Ther