Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
β Scribed by Tianfeng Li; Yonghai Chen; Wen Lei; Xiaolong Zhou; Shuai Luo; Yongzheng Hu; Lijun Wang; Tao Yang; Zhanguo Wang
- Book ID
- 115021158
- Publisher
- Springer-Verlag
- Year
- 2011
- Tongue
- English
- Weight
- 568 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1931-7573
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π SIMILAR VOLUMES
We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si 1 Γ x Ge x /Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si 1 Γ x Ge x /Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized
## Abstract The cover picture of the present issue of physica status solidi (a) contains two scanning electron micrographs showing approximately 40 nm diameter Ge nanowires grown by the vaporβliquidβsolid (VLS) technique on Si(100) (upper right figure) and Si(111) (lower left figure) substrates, re