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Effect of growth temperature on a-plane ZnO formation on r-plane sapphire

โœ Scribed by Peng, Chun-Yen; Tian, Jr-Sheng; Wang, Wei-Lin; Ho, Yen-Teng; Chuang, Shu-Chang; Chu, Ying-Hao; Chang, Li


Book ID
111672103
Publisher
AVS (American Vacuum Society)
Year
2011
Tongue
English
Weight
493 KB
Volume
29
Category
Article
ISSN
0734-2101

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Growth temperature induced effects in no
โœ Mohana K. Rajpalke; Thirumaleshwara N. Bhat; Basanta Roul; Mahesh Kumar; P. Misr ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 633 KB

Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (1 1 ร€ 2 0) orientation of the GaN epilaye