✦ LIBER ✦

Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

✍ Scribed by Dong-Joon Kim; Yong-Tae Moon; Keun-Man Song; In-Hwan Lee; Seong-Ju Park

Book ID: 107452659
Publisher: Springer US
Year: 2001
Tongue: English
Weight: 135 KB
Volume: 30
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-001-0107-y

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of growth interruption on the pr

Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD

✍ Nan-hui Niu; Huai-bing Wang; Jian-ping Liu; Nai-xin Liu; Yan-hui Xing; Jun Han; 📂 Article 📅 2007 🏛 Tianjin University of Technology 🌐 English ⚖ 152 KB

Effect of hydrogen on the indium incorpo

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

✍ Piner, E. L.; Behbehani, M. K.; El-Masry, N. A.; McIntosh, F. G.; Roberts, J. C. 📂 Article 📅 1997 🏛 American Institute of Physics 🌐 English ⚖ 241 KB

On the Possible Origins of Low Indium In

On the Possible Origins of Low Indium Incorporation during MOVPE of InGaN

✍ Talalaev, R. A. ;Yakovlev, E. V. ;Karpov, S. Yu. ;Estratov, I. Yu. ;Vorobev, A. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 118 KB

Growth temperature effects on boron inco

Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD

✍ R. Hamila; F. Saidi; P.H. Rodriguez; L. Auvray; Y. Monteil; H. Maaref 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 215 KB

Investigation of the Indium Atom Interdi

Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures

✍ Tsang, Jian-Shihn; Guo, Jan-Dar; Chan, Shih-Hsiung; Feng, Ming-Shiann; Chang, Ch 📂 Article 📅 1997 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 744 KB

Effect of doping on point defect incorpo

Effect of doping on point defect incorporation during silicon growth

✍ V.V Voronkov; R Falster 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 45 KB