An analysis on the background of dynamic internal friction (DIF) and the modulus defect (DGaG) at low frequency during plastic deformation in single crystal specimens is given. The background Q À1 b is considered to be associated with the string vibration of immobile dislocations under a combined a
✦ LIBER ✦
Effect of generated defects during plastic deformation on electron properties of silicon
✍ Scribed by Dr. A. Mąkosa
- Publisher
- John Wiley and Sons
- Year
- 1981
- Tongue
- English
- Weight
- 327 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0232-1300
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