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Effect of gap opening on the quasiparticle properties of doped graphene sheets

✍ Scribed by A. Qaiumzadeh; F. K. Joibari; R. Asgari


Book ID
111623384
Publisher
Springer
Year
2010
Tongue
English
Weight
363 KB
Volume
74
Category
Article
ISSN
1434-6036

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## Abstract Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we r