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Effect of Ga diffusion through SIO2on Si MOS transistors

✍ Scribed by Fang, F.F.; Yu, H.N.


Book ID
114588890
Publisher
IEEE
Year
1965
Tongue
English
Weight
369 KB
Volume
12
Category
Article
ISSN
0018-9383

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## Abstract Density functional theory simulation results of the atomic structure at the Si–SiO~2~ interface implies a non‐abrupt transition of the band‐gap within the oxide. The depth of the transition, 2–6 Γ…, is comparable to the approximately 1 nm oxide thickness in nano‐CMOS devices, and is expe