Effect of free carrier screening on the binding energy of D− centers in polar semiconductors
✍ Scribed by D.E. Phelps; K.K. Bajaj
- Publisher
- Elsevier Science
- Year
- 1983
- Tongue
- English
- Weight
- 368 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0038-1098
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📜 SIMILAR VOLUMES
The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga 1-x Al x As quantum wells are then obtained variationally in the presence
We carried out variational model calculations for the assessment of the combined effect of the nonparabolicity of the electron effective mass and the screening of the donor ion by the valence electrons of GaAs for a donor placed at the center of a spherical quantum dot. We considered finite confinin