𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effect of fluorine ion implantation on radiation-induced processes in the insulator layer of silicon-on-insulator structures

✍ Scribed by O. P. Gus’kova; V. M. Vorotyntsev; N. D. Abrosimova; E. L. Shobolov; M. N. Mineev

Book ID
114989177
Publisher
SP MAIK Nauka/Interperiodica
Year
2012
Tongue
English
Weight
181 KB
Volume
48
Category
Article
ISSN
0020-1685

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Optical effects of doped top layers in s
Optical effects of doped top layers in silicon-on-insulator structures formed by ion implantation
✍ Yu Yuehui; Lin Chenglu; Zou Shichang 📂 Article 📅 1995 🏛 Springer 🌐 English ⚖ 338 KB

Arsenic ions were implanted into silicon-on-insulator (SOl) structures at an incident energy of 100 keV to a dose of 2 x 10 lscm-z. Conductive top layers were formed in the SOl structures after annealing at 1200 ~ for 20 s. Infrared reflection spectra in the wave number range of 1500-5000 cm -1 were

Synthesis of buried silicon oxynitride l
Synthesis of buried silicon oxynitride layers by ion implantation for silicon-on-insulator (SOI) structures
✍ A.D. Yadav; Rucha H. Polji; Vibha Singh; S.K. Dubey; T.K. Gundu Rao 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 252 KB

Silicon oxynitride (Si x O y N z ) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by 14 N + and 16 O + ion implantation to high fluence levels 1 • 10 17 , 2.5 • 10 17 and 5 • 10 17 ions cm À2 sequentially in the ratio 1:1 at 150 keV into p-type