In this work the dielectric properties of plasma enhanced chemical vapor deposited (PECVD) amorphous SiOC (a-SiOC) films with various concentrations of oxygen are investigated for the barrier dielectric application. Experimental results show after fluorine (F) ion implanted into a-SiOC film, the lea
Effect of fluorine contamination on barrier metal oxidation
โ Scribed by S. Ozaki; Y. Nakata; Y. Kobayashi; T. Nakamura; Y. Iba; S. Fukuyama; H. Watatani; Y. Ohkura
- Book ID
- 104052405
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 461 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0167-9317
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