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Effect of epitaxial realignment on the leakage behavior of arsenic-implanted, as-deposited polycrystalline Si-on-single crystal Si diodes

โœ Scribed by Shubneesh Batra; Nanseng Jeng; Akif Sultan; Kyle Picone; Surya Bhattacharya; Keun-Hyung Park; Sanjay Banerjee; David Kao; Monte Manning; Chuck Dennison


Book ID
112817876
Publisher
Springer US
Year
1993
Tongue
English
Weight
586 KB
Volume
22
Category
Article
ISSN
0361-5235

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