๐”– Bobbio Scriptorium
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Effect of electron bombardment on minority and majority carrier lifetimes of GaSb

โœ Scribed by P. C. Euthymiou; D. I. Kladis; C. E. Ravanos; P. O. Bekris

Publisher
John Wiley and Sons
Year
1971
Tongue
English
Weight
138 KB
Volume
47
Category
Article
ISSN
0370-1972

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๐Ÿ“œ SIMILAR VOLUMES

Effect of dislocations on minority carri
Effect of dislocations on minority carrier lifetime in germanium
โœ S.S. Kulin; A.D. Kurtz ๐Ÿ“‚ Article ๐Ÿ“… 1954 ๐Ÿ› Elsevier Science โš– 317 KB

The problem of electron capture by impurities is mathematically similar to that of the absorption of thermal neutrons in a pile. This problem has been treated in detail; for example, Elements of Nuclear Reactor Theory by Glasstoe and Edlund, p. 266.

Effect of nitrogen doping on the minorit
Effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon
โœ Can Cui; Deren Yang; Xuegong Yu; Xiangyang Ma; Liben Li; Duanlin Que ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 121 KB

The effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon (CZ-Si) passivated in dry O at different temperatures was studied. It was found that the most effective passivation temperature of 2 nitrogen-doped CZ silicon (NCZ-Si) wafers was 1000 8C, the same as that of CZ-Si