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Effect of electric field, temperature, and defect formation on processes of nonequilibrium carrier emission from InAs/GaAs quantum dots

✍ Scribed by Gorshkov, A. P.; Karpovich, I. A.; Volkova, N. S.


Book ID
114991105
Publisher
Pleiades Publishing
Year
2012
Tongue
English
Weight
133 KB
Volume
6
Category
Article
ISSN
1027-4510

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A low-temperature micro-photoluminescence (m-PL) investigation of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field is reported. It is demonstrated that the QDs PL signal could be increased several times by altering the external and/or the internal electric field. The interna