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Effect of Doping Density on the Charge Rearrangement and Interface Dipole at the Molecule–Silicon Interface

✍ Scribed by Yaffe, Omer; Pujari, Sidharam; Sinai, Ofer; Vilan, Ayelet; Zuilhof, Han; Kahn, Antoine; Kronik, Leeor; Cohen, Hagai; Cahen, David

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

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