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Effect of doping concentration on the grain boundary trap density and threshold voltage of polycrystalline SOI MOSFETs

✍ Scribed by R. Joseph Daniel; K.N. Bhat; Enakshi Bhattacharya

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 210 KB
Volume: 83
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2005.07.089

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