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Effect of crucible materials on impurities in LPE GaAs

โœ Scribed by L. Mo; K.S.A. Butcher; D. Alexiev


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
366 KB
Volume
158
Category
Article
ISSN
0022-0248

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Effect of ionized impurities on electron
โœ J.H. Park; S. Ozaki; N. Mori; C. Hamaguchi ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 272 KB

Photoluminescence and electroreflectance measurements in Si ฮด-doped GaAs/Al 0.35 Ga 0.65 -As triple quantum wells are performed in order to study the effect of ionized impurities on electron tunneling. It is theoretically shown that a thin quantum well with a ฮด-doping layer inserted between narrow a