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Effect of Coulomb charge on properties of arsenic vacancy in GaAs-based quantum dots

✍ Scribed by T.V. Bezyazychnaya; G.I. Ryabtsev; M.M. Sobolev; V.M. Zelenkovskii


Book ID
108238336
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
355 KB
Volume
340-342
Category
Article
ISSN
0921-4526

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InAs quantum dots (QDs) on GaAs (0 0 1) substrates were grown by Molecular Beam Epitaxy (MBE) using two growth temperatures. Photoluminescence (PL) pump power dependence measurements at low temperature were carried out for sample grown at higher temperature (520 8C). With increasing excitation densi