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Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD

✍ Scribed by Shuzhen Yu; Guoqing Miao; Jianchun Xie; Yixin Jin; Tiemin Zhang; Hang Song; Hong Jiang; Zhiming Li

No coin nor oath required. For personal study only.

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