Multilayers of Ge nanocrystals embedded
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S.R.C. Pinto; A.G. Rolo; A. Chahboun; Maja Buljan; A. Khodorov; R.J. Kashtiban;
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Article
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2010
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Elsevier Science
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English
⚖ 603 KB
In this paper, Ge/Al 2 O 3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 °C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing