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Effect of band gap on the red luminescence capability of Pr-doped InGaN layers grown by molecular beam epitaxy

✍ Scribed by Romanyuk, Yaroslav E.; Kranz, Lukas D.; Leone, Stephen R.

Book ID: 121686456
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 645 KB
Volume: 103
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2903879

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