Aluminum nitride (AlN) films, using a dual ion beam sputtering, were prepared over the argon ion beam voltage ranging from 800 to 1200 V at room temperature. The AlN films were (0 0 2) and (1 0 0) planes. Excepting for operating at 1000 V, the AlN films exhibited the (0 0 2) preferred orientation. T
โฆ LIBER โฆ
Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system
โ Scribed by Hong-Ying Chen; Sheng Han; Chih-Hsuan Cheng; Han C. Shih
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 262 KB
- Volume
- 228
- Category
- Article
- ISSN
- 0169-4332
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Beta iron disilicide (b-FeSi 2 ) is one of the candidate materials for a compound semiconductor, which is promising for optoelectronic devices. b-FeSi 2 film has been obtained by ion beam sputter deposition (IBSD) on Si(1 0 0) substrates that are pre-treated by sputter etching by Ne + . In the prese