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Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

โœ Scribed by Hong-Ying Chen; Sheng Han; Chih-Hsuan Cheng; Han C. Shih


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
262 KB
Volume
228
Category
Article
ISSN
0169-4332

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Argon ion beam voltages influence the mi
โœ Hong-Ying Chen; Sheng Han; Han C. Shih ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 138 KB

Aluminum nitride (AlN) films, using a dual ion beam sputtering, were prepared over the argon ion beam voltage ranging from 800 to 1200 V at room temperature. The AlN films were (0 0 2) and (1 0 0) planes. Excepting for operating at 1000 V, the AlN films exhibited the (0 0 2) preferred orientation. T

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