dc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on quartz and silicon substrates by sputtering of pure tantalum target in the presence of oxygen and argon gases under various substrate temperatures in the range 303-973 K. The variation of cathode potent
✦ LIBER ✦
Effect of annealing temperature on structural and electrical properties of tantalum nitride thin film resistors deposited on SiO[sub 2]∕Si substrates by dc sputtering technique
✍ Scribed by Cuong, Nguyen Duy ;Phuong, Nguyen Mai ;Kim, Dong-Jin ;Kang, Byoung-Don ;Kim, Chang-Soo ;Yoon, Soon-Gil
- Book ID
- 121820989
- Publisher
- AVS (American Vacuum Society)
- Year
- 2006
- Tongue
- English
- Weight
- 530 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0734-211X
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