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Effect of annealing on the properties of (100) ZnO films prepared by chemical vapor deposition utilizing zinc acetate dihydrate

โœ Scribed by Liang-Chiun Chao; Hau-Ting Hu; Shih-Hsuan Yang; Yang-Chun Fan

Book ID
108290016
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
604 KB
Volume
516
Category
Article
ISSN
0040-6090

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๐Ÿ“œ SIMILAR VOLUMES

Annealing effects on electrical and opti
Annealing effects on electrical and optical properties of ZnO films deposited on GaAs by metal organic chemical vapor deposition
โœ Jingchang Sun; Hongwei Liang; Jianze Zhao; Qiuju Feng; Jiming Bian; Ziwen Zhao; ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 575 KB

## 2. Experimental procedures ZnO film was deposited on the SI-GaAs (100) substrate by MOCVD. Diethylzinc (DEZn) and O 2 were chosen as precursor of Zn and O, respectively, and high purity Ar was used as the carrying gas for DEZn. The mol flux ratio of Zn to O was kept at 1:250. The