The electrical properties of phosphorous
✦ LIBER ✦
Effect of annealing and oxide layer thickness on doping profile shape of “through-oxide” implanted P+ ions in textured silicon
✍ Scribed by M.S. El-Dessouki; R. Galloni
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 558 KB
- Volume
- 1
- Category
- Article
- ISSN
- 0960-1481
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES