๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Effect of an ultralow-frequency electric field on the explosive instability threshold of ice

โœ Scribed by E. G. Fateev

Book ID
110134203
Publisher
Springer
Year
2003
Tongue
English
Weight
77 KB
Volume
48
Category
Article
ISSN
1063-7842

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

The effect of an electric field on the v
The effect of an electric field on the vibrational frequency of CN
โœ Charles W. Bauschlicher Jr. ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 122 KB ๐Ÿ‘ 2 views

Ab initio calculations are used to compute the change in the vibrational frequency of CN with an applied electric field aligned parallel to the bond axis. The effect of the field on the CN y vibrational frequency is of the same magnitude as for CN, but in the opposite direction. These results are co

The effect of an external electric field
The effect of an external electric field on the vibrational frequency of CO
โœ Charles W. Bauschlicher Jr. ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 327 KB

Ab initio cakulatioos. using a CAS SCF wavef~ction and extended basis set, show a change in the vibationaI Irequency xvi& ektnc Iield strength for the ground'L+ state of CO of one third that observed for CO/Ni(llO). This result soppon\_s the view of Lamben Energy no field -112.798008 -112

Simulation of the lateral electrical fie
Simulation of the lateral electrical field for the analysis of threshold voltage instabilities of suspended-gate field-effect transistors
โœ Z. Gergintschew; D. Schipanski; P. Kornetzky; I. Eisele; B. Flietner ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 477 KB

The adsorption at the open insulator surface under the air gap of suspended-gate field-effect transistors (SGFETs), which leads to mobile charges, and their r~~bution due to lateral clectrica~ field strengths are two of the reasons for the threshold voltage ins~bility of these gas sensors. A two-dim