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Effect of an interfacial oxide layer on the electroluminescence efficiency of metal-quantum-confined semiconductor heterostructures

✍ Scribed by N. V. Baidus’; P. B. Demina; M. V. Dorokhin; B. N. Zvonkov; E. I. Malysheva; E. A. Uskova

No coin nor oath required. For personal study only.

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