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Effect of Al content on structure and properties of Ti1−xAlxN hard film prepared by multi-arc ion plating

✍ Scribed by Long Lu, Guangguang Feng, Minghao Ren, Huixia Zhang, Sungki Lyu

Book ID
118829041
Publisher
Korean Society for Precision Engineering
Year
2012
Tongue
English
Weight
889 KB
Volume
14
Category
Article
ISSN
1229-8557

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The effects of substrate temperature, T s , on the crystallinity and the electrical properties of Ga-doped ZnO films (GZO) with a thickness of 200 nm were investigated. GZO films were prepared on glass substrates at various T s in the range from 150 to 400 °C by ion-plating method with DC arc discha