Effect of additional gas on diamond deposition by DC PACVD
โ Scribed by Jae-Kap Lee; Young-Joon Baik; Kwang Yong Eun
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 911 KB
- Volume
- 209
- Category
- Article
- ISSN
- 0921-5093
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โฆ Synopsis
The effect of the addition of Ar and nitrogen gas on the deposition of diamond using a direct current (DC) plasma of CH c H 2 gas mixture is investigated, The DC plasma is generat:d by applying a voltage between 820 and 900 V and the resulting current is between 5,5 and 6 A, The addition of Ar makes th: plasma unstable and is limited to 5'/i, owing to the plasma extinction at higher Ar concentrations. Growth rate and non-diamo ld carbon content in the diamond film increase with the Ar amount slightly irrespective of deposition temperature. An optical emi~sion spectrum shows the increase of emission of C 2 and CH while showing a constant average electron energy of the plasma. On he contrary, by adding nitrogen, the morphology is changed to a ball-like diamond shape as well as growth rate of diamond film is decreased abruptly. The optical emission intensities of C 2 and hydrogen also show an abrupt drop with the nitrogen addition. The role of plasma species in the deposition behaviour of diamond is also discussed.
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## Abstract In this study, the deposition temperature effects on the properties of hydrogenated amorphous silicon films are reported. The aโSi:H thin films were deposited by DC magnetron sputtering technique, according to a new protocol of deposition. This last consists of a successively several th