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Effect of additional gas on diamond deposition by DC PACVD

โœ Scribed by Jae-Kap Lee; Young-Joon Baik; Kwang Yong Eun


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
911 KB
Volume
209
Category
Article
ISSN
0921-5093

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โœฆ Synopsis


The effect of the addition of Ar and nitrogen gas on the deposition of diamond using a direct current (DC) plasma of CH c H 2 gas mixture is investigated, The DC plasma is generat:d by applying a voltage between 820 and 900 V and the resulting current is between 5,5 and 6 A, The addition of Ar makes th: plasma unstable and is limited to 5'/i, owing to the plasma extinction at higher Ar concentrations. Growth rate and non-diamo ld carbon content in the diamond film increase with the Ar amount slightly irrespective of deposition temperature. An optical emi~sion spectrum shows the increase of emission of C 2 and CH while showing a constant average electron energy of the plasma. On he contrary, by adding nitrogen, the morphology is changed to a ball-like diamond shape as well as growth rate of diamond film is decreased abruptly. The optical emission intensities of C 2 and hydrogen also show an abrupt drop with the nitrogen addition. The role of plasma species in the deposition behaviour of diamond is also discussed.


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Deposition temperature effects on the ch
โœ Cherfi, R. ;Abdelmoumene, A. ;Kechouane, M. ;Rahal, A. ;Aoucher, M. ;Mohammed-Br ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 637 KB

## Abstract In this study, the deposition temperature effects on the properties of hydrogenated amorphous silicon films are reported. The aโ€Si:H thin films were deposited by DC magnetron sputtering technique, according to a new protocol of deposition. This last consists of a successively several th