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Edge dislocation behaviour in Au–n-silicon diodes

✍ Scribed by Mantovani, S. ;del Pennino, U.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Edge dislocation energy level in silicon

✍ Mantovani, S. ;Mazzega, E. ;Valeri, S. ;Del Pennino, U. 📂 Article 📅 1978 🏛 John Wiley and Sons 🌐 English ⚖ 148 KB

Tunneling from dislocation cores in sili

✍ R. Nitecki; B. Pohoryles 📂 Article 📅 1985 🏛 Springer 🌐 English ⚖ 595 KB

Dislocation-induced shift of the absorpt

✍ S.Kh. Mil'shtein; B.G. Yacobi 📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 232 KB

Formation of dislocation loops in silico

✍ M. Milosavljević; M.A. Lourenço; G. Shao; R.M. Gwilliam; K.P. Homewood 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 480 KB

Au/Ni bilayers on n-type silicon: Metall

✍ F. Nava; S. Mantovani; E. Galli; G. Queirolo 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 267 KB

Recombination in silicon p−π−n diodes

✍ P.G. Wilson 📂 Article 📅 1967 🏛 Elsevier Science 🌐 English ⚖ 809 KB