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Au/Ni bilayers on n-type silicon: Metallurgical and electrical behaviour

✍ Scribed by F. Nava; S. Mantovani; E. Galli; G. Queirolo

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
267 KB
Volume
140
Category
Article
ISSN
0040-6090

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## Abstract The realtime evolution of stress during deposition of Cu/Au and Au/Cu bilayers was studied by an in‐situ curvature measurement optical technique and annealing in the temperature range from room temperature to 400 Β°C. The Au/Cu and Cu/Au bilayers attached to silicon substrate with total