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ECS Transactions [ECS China Semiconductor Technology International Conference 2010 (CSTIC 2010) - Shanghai, China (March 18 - March 19, 2010)] - Review on Methods for Trench MOSFET Gate Oxide Reliability and Switching Speed Improvement

✍ Scribed by Ng, Hong Seng

Book ID: 125433860
Publisher: ECS
Year: 2010
Weight: 324 KB
Category: Article
DOI: 10.1149/1.3360590

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