[ECS 212th ECS Meeting - Washington, DC (October 7 - October 12, 2007)] ECS Transactions - The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi formation

✍ Scribed by Hurley, Paul; Pijolat, Mathieu; Cherkaoui, Karim; O'Connor, Eamon; O'Connell, Dan; Negara, Muhammad Adi; Lemme, Max C.; Gottlobb, Heiner D.; Schmidt, Mathias; Stegmaier, Katja; Schwalke, Udo; Hall, Stephen; O.Buiu, Octavian; Engstrom, Olof; Newcomb, Simon

• Book ID: 121859095
• Publisher: ECS
• Year: 2007
• Weight: 651 KB
• Volume: 11
• Category: Article
• DOI: 10.1149/1.2779556