[ECS 212th ECS Meeting - Washington, DC (October 7 - October 12, 2007)] ECS Transactions - In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness

✍ Scribed by Kambhampati, Rama; Koveshnikov, Sergei; Tokranov, Vadim; Yakimov, M.; Moore, R; Tsai, Wilman; Oktyabrsky, S.

• Book ID: 126944671
• Publisher: ECS
• Year: 2007
• Weight: 539 KB
• Volume: 11
• Category: Article
• DOI: 10.1149/1.2779579