Dynamic process of self-started self-mode-locked Ti:sapphire laser with a semiconductor saturable absorber mirror
โ Scribed by Ching-yue Wang; Yong Wang; Lu Chai; Weili Zhang; Qirong Xing; Zhigang Zhang
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 100 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0030-3992
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โฆ Synopsis
Dynamic process of self-started self-mode-locked Ti : sapphire laser with a semiconductor saturable absorber mirror (SESAM) was investigated and two mode-locking starting processes were found in which one is fast and the other is slow. In the fast starting process, a mode-locking build-up time of about 400 s was needed during which pure passive mode-locking process was caused by the SESAM and Kerr-lens mode-locking process arose from the nonlinearity of the Ti : sapphire gain medium. In the slow starting process, a build-up time of about several minutes was found in which temperature e ect of the SESAM dominates the dynamic process.
๐ SIMILAR VOLUMES
A diode-pumped passively mode-locked YVO 4 / Nd:YVO4 composite crystal green laser with a semiconductor saturable absorber mirror (SESAM) and a intracavity frequencydoubling KTP crystal was realized. The maximum average output power of 2.06 W at 532 nm with a repetition rate of 100 MHz was obtained