In this work the effect of aluminium treatment on the material and device properties of highly disordered multicrystalline silicon wafers is analysed using the light beam induced current method at different wavelengths. The results show an improvement of the diffusion length L measured on samples su
Dynamic modelling of the diffusion-segregation gettering. Application to the gettering by Al in Si
✍ Scribed by Luque, A. ;del Cañizo, C. ;Lagos, R. ;Moehlecke, A.
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 669 KB
- Volume
- 157
- Category
- Article
- ISSN
- 0031-8965
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