Dynamic high-current stressing damage and post-stress relaxation in p-n-p silicon bipolar junction transistors

✍ Scribed by S.-L. Jang; S.-S. Liu; C.-J. Tsai

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 746 KB
• Volume: 38
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(94)00246-c